HEMT materials and devices
نویسندگان
چکیده
منابع مشابه
Photonic Materials and Devices
Our recent advances in solid-state optoelectronic materials and devices will be reviewed. In the area of glass optics, fabrication of novel microstructured and multi-core fibers and their use in realizing single mode lasers will be summarized. In organic and plastic optics, photorefractive polymers for 3D display applications and nonlinear optical polymers for high speed modulators in RF photon...
متن کاملModelling Reliability in GaN HEMT Devices
In this paper a study of the evolution over time of four different magnitudes in GaN HEMT’s will be presented. The experimental data measured at III-V Lab’s, as a result of a Life Test performed using as test vehicles six different GaN HEMT devices, allow the authors to find a way of modelling reliability by using specific mathematical functions developed to simulate the temporal dependence of ...
متن کاملA New Empirical Nonlinear Model for HEMT and MESFET Devices
A new large signal model for HEMT’s and MESFET’s, capable of ,modeling the current-voltage characteristic and its derivatives, including the characteristic transconductance peak, gate-source and gate-drain capacitances is described. Model parameter extraction is straightforward and is demonstrated for different submicron gate-length HEMT devices including different d-doped pseudomorphic HEMTs o...
متن کاملPhotonics Materials and Devices
Part 2 reviews the materials properties of photonic materials, such as structure (chemical bonds) and electrical conductivity (bands) in Group IV and III-V compound/alloy semiconductors. The correlation of the principal quantum number with optical, thermal and mechanical properties is examined. The definition of effective mass qualifies the energy-wavenumber dispersion relation for direct or in...
متن کاملOn-Wafer, Cryogenic Characterization of Ultra-Low Noise HEMT Devices
Significant advances in the development of high electron-mobility field-effect transistors (HEMTs) have resulted in cryogenic, low-noise amplifiers (LNAs) whose noise temperatures are within an order of magnitude of the quantum noise limit (hf/k). Further advances in HEMT technology at cryogenic temperatures may eventually lead to the replacement of maser and superconducting–insulator– supercon...
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ژورنال
عنوان ژورنال: III-Vs Review
سال: 2003
ISSN: 0961-1290
DOI: 10.1016/s0961-1290(03)80279-x